RN1130MFV Series
Manufacturer: Toshiba Semiconductor and Storage
BIPOLAR TRANSISTORS, NPN BIAS RESISTOR BUILT-IN TRANSISTORS (BRT), 100 KΩ/100 KΩ, SOT-723(VESM)
| Part | Transistor Type | Resistor - Emitter Base (R2) | Resistor - Base (R1) | Supplier Device Package | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Current - Collector (Ic) (Max) [Max] | Current - Collector Cutoff (Max) [Max] | Power - Max [Max] | Frequency - Transition | Voltage - Collector Emitter Breakdown (Max) [Max] | Mounting Type | Package / Case | Vce Saturation (Max) @ Ib, Ic |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | NPN - Pre-Biased | 100 kOhms | 100 kOhms | VESM | 100 | 100 mA | 500 nA | 150 mW | 250 MHz | 50 V | Surface Mount | SOT-723 | 300 mV |