FCP190N65F Series

Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 650V, 20.6A, 190mΩ, TO-220

Catalog

Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 650V, 20.6A, 190mΩ, TO-220

Part	Vgs(th) (Max) @ Id [Max]	Rds On (Max) @ Id, Vgs	FET Type	Package / Case	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Technology	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Drain to Source Voltage (Vdss)
ON Semiconductor FCP190N65F	5 V	190 mOhm	N-Channel	TO-220-3	20 V	3225 pF	78 nC	TO-220-3	MOSFET (Metal Oxide)	208 W	-55 °C	150 °C	20.6 A	10 V	Through Hole	650 V

Catalog

Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 650V, 20.6A, 190mΩ, TO-220

Key Features

• 700 V @ TJ= 150°C

• Typ. RDS(on)= 168 mΩ

• Ultra Low Gate Charge (Typ. Qg= 60 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.)= 186 pF)

• 100% Avalanche Tested

• RoHS Compliant

Description

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizingcharge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET®MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.