FDS70 Series
Manufacturer: ON Semiconductor
MOSFET N-CH 30V 17.5A 8SO
| Part | Mounting Type | FET Type | Package / Case | Package / Case | Package / Case | Vgs(th) (Max) @ Id | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case [y] | Package / Case [x] | Rds On (Max) @ Id, Vgs [Max] | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | Surface Mount | N-Channel | 0.154 in | 8-SOIC | 3.9 mm | 3 V | 20 V | 17.5 A | 2271 pF | -55 °C | 150 °C | MOSFET (Metal Oxide) | 3 W | 53 nC | 30 V | 6 mOhm | 4.5 V 10 V | 8-SO FLMP | |||||
ON Semiconductor | Surface Mount | N-Channel | 0.154 in | 8-SOIC | 3.9 mm | 3 V | 20 V | 23 A | 3845 pF | -55 °C | 150 °C | MOSFET (Metal Oxide) | 3 W | 30 V | 3 mOhm | 4.5 V 10 V | 8-SO FLMP | 48 nC | |||||
ON Semiconductor | Surface Mount | N-Channel | 8-SOIC | 3 V | 20 V | 19 A | 2460 pF | -55 °C | 150 °C | MOSFET (Metal Oxide) | 3 W | 62 nC | 30 V | 4.8 mOhm | 4.5 V 10 V | 8-SO | 3.9 mm | 0.154 in | |||||
ON Semiconductor | Surface Mount | N-Channel | 8-SOIC | 3 V | 20 V | 17.5 A | 2271 pF | -55 °C | 150 °C | MOSFET (Metal Oxide) | 3 W | 53 nC | 30 V | 6 mOhm | 4.5 V 10 V | 8-SO | 3.9 mm | 0.154 in | |||||
ON Semiconductor | Surface Mount | N-Channel | 0.154 in | 8-SOIC | 3.9 mm | 3 V | 20 V | 19 A | 3274 pF | -55 °C | 150 °C | MOSFET (Metal Oxide) | 3 W | 30 V | 4.5 V 10 V | 8-SO FLMP | 56 nC | 5 mOhm | |||||
ON Semiconductor | Surface Mount | N-Channel | 0.154 in | 8-SOIC | 3.9 mm | 3 V | 16 V | 23 A | 4973 pF | -55 °C | 150 °C | MOSFET (Metal Oxide) | 3 W | 30 V | 4.5 mOhm | 4.5 V 10 V | 8-SO FLMP | 69 nC | |||||
ON Semiconductor | Surface Mount | N-Channel | 8-SOIC | 3 V | 20 V | 19 A | 3274 pF | -55 °C | 150 °C | MOSFET (Metal Oxide) | 3 W | 30 V | 4.5 V 10 V | 8-SO | 56 nC | 3.9 mm | 0.154 in | 5 mOhm | |||||
ON Semiconductor | Surface Mount | N-Channel | 0.154 in | 8-SOIC | 3.9 mm | 3 V | 16 V | 23 A | 4973 pF | -55 °C | 150 °C | MOSFET (Metal Oxide) | 3 W | 30 V | 4.5 V 10 V | 8-SO FLMP | 69 nC | 5.5 mOhm | |||||
ON Semiconductor | Surface Mount | N-Channel | 0.154 in | 8-SOIC | 3.9 mm | 3 V | 20 V | 19 A | 2460 pF | -55 °C | 150 °C | MOSFET (Metal Oxide) | 3 W | 62 nC | 30 V | 4.8 mOhm | 4.5 V 10 V | 8-SO FLMP | |||||
ON Semiconductor | Surface Mount | N-Channel | 0.154 in | 8-SOIC | 3.9 mm | 3 V | 16 V | 2800 pF | -55 °C | 150 °C | MOSFET (Metal Oxide) | 30 V | 8 mOhm | 4.5 V 10 V | 8-SO FLMP | 35 nC | 3.13 W |