SIE848 Series

Catalog

MOSFET N-CH 30V 60A 10POLARPAK

Part	FET Type	Mounting Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Technology	Package / Case	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SIE848DF-T1-GE3	N-Channel	Surface Mount	2.5 V	138 nC	60 A	30 V	MOSFET (Metal Oxide)	10-PolarPAK® (L)	5.2 W 125 W	1.6 mOhm	4.5 V 10 V	-55 °C	150 °C	10-PolarPAK® (L)	20 V	6100 pF
Vishay General Semiconductor - Diodes Division SIE848DF-T1-E3	N-Channel	Surface Mount	2.5 V	138 nC	60 A	30 V	MOSFET (Metal Oxide)	10-PolarPAK® (L)	5.2 W 125 W	1.6 mOhm	4.5 V 10 V	-55 °C	150 °C	10-PolarPAK® (L)	20 V	6100 pF