GD25LQ32 Series
Manufacturer: GigaDevice Semiconductor (HK) Limited
IC FLASH 32MBIT SPI/QUAD 8USON
| Part | Mounting Type | Memory Type | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Package / Case | Memory Organization | Access Time | Memory Format | Clock Frequency | Technology | Memory Size | Memory Interface | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Voltage - Supply [Min] | Voltage - Supply [Max] | Package / Case | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GigaDevice Semiconductor (HK) Limited | Surface Mount | Non-Volatile | 100 µs | 4 ms | 8-UDFN Exposed Pad | 4M x 8 | 6 ns | FLASH | 133 MHz | FLASH - NOR (SLC) | 4 MB | QPI SPI - Quad I/O | 8-USON (3x4) | 125 °C | -40 °C | 1.65 V | 2 V | |||
GigaDevice Semiconductor (HK) Limited | Surface Mount | Non-Volatile | 100 µs | 4 ms | 8-XDFN Exposed Pad | 4M x 8 | 6 ns | FLASH | 133 MHz | FLASH - NOR (SLC) | 4 MB | QPI SPI - Quad I/O | 8-USON (4x4) | 125 °C | -40 °C | 1.65 V | 2 V | |||
GigaDevice Semiconductor (HK) Limited | Surface Mount | Non-Volatile | 60 µs | 2.4 ms | 8-XDFN Exposed Pad | 4M x 8 | 6 ns | FLASH | 133 MHz | FLASH - NOR (SLC) | 4 MB | QPI SPI - Quad I/O | 8-USON (4x4) | 85 C | -40 ¯C | 1.65 V | 2 V | |||
GigaDevice Semiconductor (HK) Limited | Surface Mount | Non-Volatile | 100 µs | 4 ms | 8-SOIC | 4M x 8 | 6 ns | FLASH | 133 MHz | FLASH - NOR (SLC) | 4 MB | QPI SPI - Quad I/O | 8-SOP | 125 °C | -40 °C | 1.65 V | 2 V | 0.209 in 5.3 mm | ||
GigaDevice Semiconductor (HK) Limited | Surface Mount | Non-Volatile | 60 µs | 2.4 ms | 8-SOIC | 4M x 8 | 6 ns | FLASH | 133 MHz | FLASH - NOR (SLC) | 4 MB | QPI SPI - Quad I/O | 8-SOP | 85 C | -40 ¯C | 1.65 V | 2 V | 0.154 in | 3.9 mm | |
GigaDevice Semiconductor (HK) Limited | Surface Mount | Non-Volatile | 60 µs | 2.4 ms | 8-WDFN Exposed Pad | 4M x 8 | 6 ns | FLASH | 133 MHz | FLASH - NOR (SLC) | 4 MB | QPI SPI - Quad I/O | 8-WSON (5x6) | 85 C | -40 ¯C | 1.65 V | 2 V | |||
GigaDevice Semiconductor (HK) Limited | Surface Mount | Non-Volatile | 60 µs | 2.4 ms | 8-SOIC | 4M x 8 | 6 ns | FLASH | 133 MHz | FLASH - NOR (SLC) | 4 MB | QPI SPI - Quad I/O | 8-SOP | 85 C | -40 ¯C | 1.65 V | 2 V | 0.154 in | 3.9 mm | |
GigaDevice Semiconductor (HK) Limited | Surface Mount | Non-Volatile | 60 µs | 2.4 ms | 8-WDFN Exposed Pad | 4M x 8 | 6 ns | FLASH | 133 MHz | FLASH - NOR (SLC) | 4 MB | QPI SPI - Quad I/O | 8-WSON (5x6) | 105 °C | -40 °C | 1.65 V | 2 V | |||
GigaDevice Semiconductor (HK) Limited | Surface Mount | Non-Volatile | 60 µs | 2.4 ms | 8-SOIC | 4M x 8 | 6 ns | FLASH | 133 MHz | FLASH - NOR (SLC) | 4 MB | QPI SPI - Quad I/O | 8-SOP | 85 C | -40 ¯C | 1.65 V | 2 V | 0.209 in 5.3 mm | ||
GigaDevice Semiconductor (HK) Limited | Surface Mount | Non-Volatile | 60 µs | 2.4 ms | 8-SOIC | 4M x 8 | 6 ns | FLASH | 133 MHz | FLASH - NOR (SLC) | 4 MB | QPI SPI - Quad I/O | 8-SOP | 105 °C | -40 °C | 1.65 V | 2 V | 0.209 in 5.3 mm |