SI7384 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 30V 11A PPAK SO-8
| Part | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs [Max] | Mounting Type | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Package / Case | Current - Continuous Drain (Id) @ 25°C | FET Type | Vgs (Max) | Technology | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 3 V | 8.5 mOhm | Surface Mount | PowerPAK® SO-8 | -55 °C | 150 °C | 30 V | PowerPAK® SO-8 | 11 A | N-Channel | 20 V | MOSFET (Metal Oxide) | 1.8 W | 4.5 V 10 V | 18 nC |
Vishay General Semiconductor - Diodes Division | 3 V | 8.5 mOhm | Surface Mount | PowerPAK® SO-8 | -55 °C | 150 °C | 30 V | PowerPAK® SO-8 | 11 A | N-Channel | 20 V | MOSFET (Metal Oxide) | 1.8 W | 4.5 V 10 V | 18 nC |