SIHP6 Series

Catalog

MOSFET N-CH 800V 5.4A TO220AB

Part	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	FET Type	Vgs(th) (Max) @ Id	Technology	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]
Vishay General Semiconductor - Diodes Division SIHP6N80E-GE3	800 V	827 pF	44 nC	5.4 A	78 W	TO-220-3	10 V	TO-220AB	N-Channel	4 V	MOSFET (Metal Oxide)	Through Hole	940 mOhm	30 V	-55 °C	150 °C
Vishay General Semiconductor - Diodes Division SIHP6N65E-GE3	650 V	820 pF	48 nC	7 A	78 W	TO-220-3	10 V	TO-220AB	N-Channel	4 V	MOSFET (Metal Oxide)	Through Hole	600 mOhm	30 V	-55 °C	150 °C
Vishay General Semiconductor - Diodes Division SIHP6N80AE-GE3	800 V	422 pF		5 A		TO-220-3		TO-220AB	N-Channel	4 V	MOSFET (Metal Oxide)	Through Hole	950 mOhm	30 V	-55 °C	150 °C	22.5 nC	62.5 W