FQD6 Series

Catalog

MOSFET N-CH 400V 4.2A DPAK

Part	Vgs(th) (Max) @ Id	Vgs (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Technology	Supplier Device Package	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [x]	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FQD6N40TM	5 V	30 V	Surface Mount	4.2 A	MOSFET (Metal Oxide)	TO-252AA	2.5 W 50 W	400 V	10 V	N-Channel	17 nC	-55 °C	150 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.15 Ohm	620 pF
ON Semiconductor FQD6N40CTF	4 V	30 V	Surface Mount	4.5 A	MOSFET (Metal Oxide)	TO-252AA	2.5 W 48 W	400 V	10 V	N-Channel		-55 °C	150 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	1 Ohm	625 pF	20 nC
ON Semiconductor FQD6N60CTM	4 V	30 V	Surface Mount	4 A	MOSFET (Metal Oxide)	TO-252AA	80 W	600 V	10 V	N-Channel		-55 °C	150 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	2 Ohm	810 pF	20 nC
ON Semiconductor FQD6P25TF	5 V	30 V	Surface Mount	4.7 A	MOSFET (Metal Oxide)	TO-252AA	2.5 W 55 W	250 V	10 V	P-Channel		-55 °C	150 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.1 Ohm	780 pF		27 nC
ON Semiconductor FQD6P25TM	5 V	30 V	Surface Mount	4.7 A	MOSFET (Metal Oxide)	TO-252AA	2.5 W 55 W	250 V	10 V	P-Channel		-55 °C	150 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.1 Ohm	780 pF		27 nC
ON Semiconductor FQD630TM	4 V	25 V	Surface Mount	7 A	MOSFET (Metal Oxide)	TO-252AA	2.5 W 46 W	200 V	10 V	N-Channel		-55 °C	150 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	400 mOhm	550 pF		25 nC