FJV3110R Series

NPN Epitaxial Silicon Transistor with Bias Resistor

Catalog

NPN Epitaxial Silicon Transistor with Bias Resistor

Part	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Resistor - Base (R1)	Supplier Device Package	Resistor - Emitter Base (R2)
ON Semiconductor FJV3111RMTF	200 mW	100 mA	SC-59 SOT-23-3 TO-236-3	40 V	100	NPN - Pre-Biased	300 mV	Surface Mount	250 MHz	100 nA	22 kOhms	SOT-23-3
ON Semiconductor FJV3114RMTF	200 mW	100 mA	SC-59 SOT-23-3 TO-236-3	50 V	68	NPN - Pre-Biased	300 mV	Surface Mount	250 MHz	100 nA	4.7 kOhms	SOT-23-3	47000 Ohms
ON Semiconductor FJV3110RMTF	200 mW	100 mA	SC-59 SOT-23-3 TO-236-3	40 V	100	NPN - Pre-Biased	300 mV	Surface Mount	250 MHz	100 nA	10 kOhms	SOT-23-3
ON Semiconductor FJV3113RMTF	200 mW	100 mA	SC-59 SOT-23-3 TO-236-3	50 V	68	NPN - Pre-Biased	300 mV	Surface Mount	250 MHz	100 nA	2.2 kOhm	SOT-23-3	47000 Ohms

NPN Epitaxial Silicon Transistor with Bias Resistor

• 100 mA Output Current Capability

• Built-in Bias Resistor (R1=4.7KΩ, R2=47KΩ)

Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.