NVJS4151P Series

Single P−Channel Trench Power MOSFET -20V -4.1A 67mΩ

Catalog

Single P−Channel Trench Power MOSFET -20V -4.1A 67mΩ

Part	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Qualification	Package / Case	Grade	Power Dissipation (Max)	Technology	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor NVJS4151PT1G	67 mOhm	10 nC	Surface Mount	AEC-Q101	6-TSSOP SC-88 SOT-363	Automotive	1.2 W	MOSFET (Metal Oxide)	SC-88 SC70-6 SOT-363	-55 °C	150 °C	20 V	1.5 V 4.5 V	P-Channel	3.2 A	12 V	1.2 V	850 pF

Catalog

Single P−Channel Trench Power MOSFET -20V -4.1A 67mΩ

Key Features

• Leading Trench Technology for Low RDS(on)Extending Battery Life

• SC-88 Small Outline (2x2 mm) for Maximum Circuit Board Utilization, same as SC-70-6

• Gate Diodes for ESD Protetion

• AEC−Q101 Qualified and PPAP Capable

• RoHS Compliant

Description

Automotive Power MOSFET ideal for low power applications. -20V -4.2A 60 mΩ Single P-Channel SC−88, Logic Level. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.