SSM6N56FE Series

Catalog

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH X 2 MOSFET, 20 V, 0.8 A, 0.235 Ω@4.5V, SOT-563(ES6)

Part	Rds On (Max) @ Id, Vgs	Supplier Device Package	Package / Case	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	FET Feature	FET Feature	Drain to Source Voltage (Vdss)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Configuration
Toshiba Semiconductor and Storage SSM6N56FE,LM	235 mOhm	ES6	SOT-563 SOT-666	150 °C	1 nC	1 V	Logic Level Gate	1.5 V	20 V	Surface Mount	800 mA	MOSFET (Metal Oxide)	55 pF	2 N-Channel (Dual)