IRFU4105 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 55V 30A TO251AA
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) | Mounting Type | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Package / Case | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | -55 °C | 175 ░C | MOSFET (Metal Oxide) | 27 nC | 48 W | Through Hole | 4 V | 55 V | 740 pF | 20 V | IPAK TO-251-3 Short Leads TO-251AA | N-Channel | 10 V | 24.5 mOhm | 30 A | TO-251AA |