SN74LVC1G00-EP Series

Enhanced product single 1-input, 1.65-V to 5.5-V NAND gate

Catalog

Enhanced product single 1-input, 1.65-V to 5.5-V NAND gate

Part	Input Logic Level - Low [Max]	Input Logic Level - Low [Min]	Logic Type	Number of Inputs	Max Propagation Delay @ V, Max CL	Current - Output High, Low [y]	Current - Output High, Low [x]	Mounting Type	Package / Case	Supplier Device Package	Voltage - Supply [Max]	Voltage - Supply [Min]	Input Logic Level - High [Min]	Input Logic Level - High [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Quiescent (Max) [Max]	Number of Circuits	Supplier Device Package [x]	Supplier Device Package [y]
Texas Instruments SN74LVC1G00DBV3
Texas Instruments V62/04732-02XE	0.8 V	0.7 V	NAND Gate	2	5 ns	32 mA	32 mA	Surface Mount	5-TSSOP SC-70-5 SOT-353	SC-70-5	5.5 V	1.65 V	1.7 V	2 V	-55 °C	125 °C	10 µA	1
Texas Instruments SN74LVC1G00DCKTE4	0.8 V	0.7 V	NAND Gate	2	4.3 ns	32 mA	32 mA	Surface Mount	5-TSSOP SC-70-5 SOT-353	SC-70-5	5.5 V	1.65 V	1.7 V	2 V	-40 °C	125 °C	10 µA	1
Texas Instruments SN74LVC1G00YEAR	0.8 V	0.7 V	NAND Gate	2	4 ns	32 mA	32 mA	Surface Mount	5-XFBGA DSBGA	5-DSBGA	5.5 V	1.65 V	1.7 V	2 V	-40 °C	85 °C	10 µA	1	1.4	0.9
Texas Instruments SN74LVC1G00DCKT	0.8 V	0.7 V	NAND Gate	2	4.3 ns	32 mA	32 mA	Surface Mount	5-TSSOP SC-70-5 SOT-353	SC-70-5	5.5 V	1.65 V	1.7 V	2 V	-40 °C	125 °C	10 µA	1
Texas Instruments SN74LVC1G00IDCKREP	0.8 V	0.7 V	NAND Gate	2	4 ns	32 mA	32 mA	Surface Mount	5-TSSOP SC-70-5 SOT-353	SC-70-5	5.5 V	1.65 V	1.7 V	2 V	-40 °C	85 °C	10 µA	1
Texas Instruments SN74LVC1G00MDCKREP	0.8 V	0.7 V	NAND Gate	2	5 ns	32 mA	32 mA	Surface Mount	5-TSSOP SC-70-5 SOT-353	SC-70-5	5.5 V	1.65 V	1.7 V	2 V	-55 °C	125 °C	10 µA	1
Texas Instruments SN74LVC1G00YZPR	0.8 V	0.7 V	NAND Gate	2	4 ns	32 mA	32 mA	Surface Mount	5-XFBGA DSBGA	5-DSBGA	5.5 V	1.65 V	1.7 V	2 V	-40 °C	85 °C	10 µA	1	1.4	0.9
Texas Instruments SN74LVC1G00MDBVREP	0.8 V	0.7 V	NAND Gate	2	5 ns	32 mA	32 mA	Surface Mount	SC-74A SOT-753	SOT-23-5	5.5 V	1.65 V	1.7 V	2 V	-55 °C	125 °C	10 µA	1
Texas Instruments SN74LVC1G00DCKJ	0.8 V	0.7 V	NAND Gate	2	4.3 ns	32 mA	32 mA	Surface Mount	5-TSSOP SC-70-5 SOT-353	SC-70-5	5.5 V	1.65 V	1.7 V	2 V	-40 °C	125 °C	10 µA	1

Catalog

Enhanced product single 1-input, 1.65-V to 5.5-V NAND gate

Key Features

• Controlled BaselineOne Assembly/Test Site, One Fabrication SiteEnhanced Diminishing Manufacturing Sources (DMS) SupportEnhanced Product-Change NotificationQualification Pedigree(1)Supports 5-V VCCOperationInputs Accept Voltages to 5.5 VMax tpdof 3.8 ns at 3.3 VLow Power Consumption, 10-µA Max ICC±24-mA Output Drive at 3.3 VIoffSupports Partial-Power-Down Mode OperationLatch-Up Performance Exceeds 100 mA Per JESD 78, Class IIESD Protection Exceeds JESD 222000-V Human-Body Model (A114-A)200-V Machine Model (A115-A)1000-V Charged-Device Model (C101)(1)Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.Controlled BaselineOne Assembly/Test Site, One Fabrication SiteEnhanced Diminishing Manufacturing Sources (DMS) SupportEnhanced Product-Change NotificationQualification Pedigree(1)Supports 5-V VCCOperationInputs Accept Voltages to 5.5 VMax tpdof 3.8 ns at 3.3 VLow Power Consumption, 10-µA Max ICC±24-mA Output Drive at 3.3 VIoffSupports Partial-Power-Down Mode OperationLatch-Up Performance Exceeds 100 mA Per JESD 78, Class IIESD Protection Exceeds JESD 222000-V Human-Body Model (A114-A)200-V Machine Model (A115-A)1000-V Charged-Device Model (C101)(1)Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.

Description

This single 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCCoperation. The SN74LVC1G00 performs the Boolean functionY =A × Bor Y =A+Bin positive logic. The CMOS device has high output drive while maintaining low static power dissipation over a broad VCCoperating range. The SN74LVC1G00 is available in a variety of packages, including the ultra-small DPW package with a body size of 0.8 mm × 0.8 mm. This single 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCCoperation. The SN74LVC1G00 performs the Boolean functionY =A × Bor Y =A+Bin positive logic. The CMOS device has high output drive while maintaining low static power dissipation over a broad VCCoperating range. The SN74LVC1G00 is available in a variety of packages, including the ultra-small DPW package with a body size of 0.8 mm × 0.8 mm.