LMG3410R050 Series
600-V 50-mΩ GaN with integrated driver and protection
Manufacturer: Texas Instruments
Catalog
600-V 50-mΩ GaN with integrated driver and protection
Key Features
• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profilesEnables high density power conversion designsSuperior system performance over cascode or stand-alone GaN FETsLow inductance 8 mm x 8 mm QFN package for ease of design, and layoutAdjustable drive strength for switching performance and EMI controlDigital fault status output signalOnly +12 V unregulated supply neededIntegrated gate driverZero common source inductance20 ns Propagation delay for MHz operationTrimmed gate bias voltage to compensate for threshold variations ensures reliable switching25 to 100V/ns User adjustable slew rateRobust protectionRequires no external protection componentsOvercurrent protection with less than 100 ns responseGreater than 150 V/ns Slew rate immunityTransient overvoltage immunityOvertemperature protectionUnder voltage lock out (UVLO) Protection on all supply railsRobust protectionLMG3410R050: Latched overcurrent protectionLMG3411R050: Cycle-by-cycle overcurrent protectionTI GaN FET reliability qualified with in-application hard-switching accelerated stress profilesEnables high density power conversion designsSuperior system performance over cascode or stand-alone GaN FETsLow inductance 8 mm x 8 mm QFN package for ease of design, and layoutAdjustable drive strength for switching performance and EMI controlDigital fault status output signalOnly +12 V unregulated supply neededIntegrated gate driverZero common source inductance20 ns Propagation delay for MHz operationTrimmed gate bias voltage to compensate for threshold variations ensures reliable switching25 to 100V/ns User adjustable slew rateRobust protectionRequires no external protection componentsOvercurrent protection with less than 100 ns responseGreater than 150 V/ns Slew rate immunityTransient overvoltage immunityOvertemperature protectionUnder voltage lock out (UVLO) Protection on all supply railsRobust protectionLMG3410R050: Latched overcurrent protectionLMG3411R050: Cycle-by-cycle overcurrent protection
Description
AI
The LMG341xR050 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG341x’s inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.
The LMG341xR050 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100 V/ns switching with near zero Vds ringing, less than 100 ns current limiting response self-protects against unintended shoot-through events, overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.
The LMG341xR050 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG341x’s inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.
The LMG341xR050 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100 V/ns switching with near zero Vds ringing, less than 100 ns current limiting response self-protects against unintended shoot-through events, overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.
