MP1921 Series
Manufacturer: Monolithic Power Systems Inc.
IC GATE DRVR HALF-BRIDGE 9QFN
| Part | Gate Type | Driven Configuration | High Side Voltage - Max (Bootstrap) [Max] | Channel Type | Package / Case | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Operating Temperature [Min] | Operating Temperature [Max] | Voltage - Supply [Min] | Voltage - Supply [Max] | Mounting Type | Number of Drivers | Supplier Device Package | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Logic Voltage - VIL, VIH | Input Type | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Monolithic Power Systems Inc. | MOSFET (N-Channel) N-Channel MOSFET | Half-Bridge | 120 V | Independent | 9-VFDFN Exposed Pad | 12 ns | 9 ns | -40 C | 125 °C | 9 V | 18 V | Surface Mount | 2 | 9-QFN (3x3) | 2.5 A | 2.5 A | 1 V 2.4 V | Non-Inverting | ||
Monolithic Power Systems Inc. | MOSFET (N-Channel) N-Channel MOSFET | Half-Bridge | 120 V | Independent | 10-VDFN Exposed Pad | 12 ns | 9 ns | -40 C | 125 °C | 9 V | 18 V | Surface Mount | 2 | 10-QFN (4x4) | 2.5 A | 2.5 A | 1 V 2.4 V | Non-Inverting | ||
Monolithic Power Systems Inc. | MOSFET (N-Channel) N-Channel MOSFET | Half-Bridge | 120 V | Independent | 10-VDFN Exposed Pad | 12 ns | 9 ns | -40 C | 125 °C | 9 V | 18 V | Surface Mount | 2 | 10-QFN (4x4) | 2.5 A | 2.5 A | 1 V 2.4 V | Non-Inverting | ||
Monolithic Power Systems Inc. | MOSFET (N-Channel) N-Channel MOSFET | Half-Bridge | 120 V | Independent | 8-VDFN Exposed Pad | 12 ns | 9 ns | -40 C | 125 °C | 9 V | 18 V | Surface Mount | 2 | 8-QFN (3x3) | 2.5 A | 2.5 A | 1 V 2.4 V | Non-Inverting | ||
Monolithic Power Systems Inc. | MOSFET (N-Channel) N-Channel MOSFET | Half-Bridge | 120 V | Independent | 8-SOIC | 12 ns | 9 ns | -40 C | 125 °C | 9 V | 18 V | Surface Mount | 2 | 8-SOIC | 2.5 A | 2.5 A | 1 V 2.4 V | Non-Inverting | 0.154 in | 3.9 mm |
Monolithic Power Systems Inc. | MOSFET (N-Channel) N-Channel MOSFET | Half-Bridge | 120 V | Independent | 8-SOIC | 12 ns | 9 ns | -40 C | 125 °C | 9 V | 18 V | Surface Mount | 2 | 8-SOIC | 2.5 A | 2.5 A | 1 V 2.4 V | Non-Inverting | 0.154 in | 3.9 mm |
Monolithic Power Systems Inc. | MOSFET (N-Channel) N-Channel MOSFET | Half-Bridge | 120 V | Independent | 9-VFDFN Exposed Pad | 12 ns | 9 ns | -40 C | 125 °C | 9 V | 18 V | Surface Mount | 2 | 9-QFN (3x3) | 2.5 A | 2.5 A | 1 V 2.4 V | Non-Inverting | ||
Monolithic Power Systems Inc. | MOSFET (N-Channel) N-Channel MOSFET | Half-Bridge | 120 V | Independent | 8-VDFN Exposed Pad | 12 ns | 9 ns | -40 C | 125 °C | 9 V | 18 V | Surface Mount | 2 | 8-QFN (3x3) | 2.5 A | 2.5 A | 1 V 2.4 V | Non-Inverting |