IRL540 Series

Catalog

MOSFET N-CH 100V 28A D2PAK

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Vgs (Max)	Technology
Vishay General Semiconductor - Diodes Division IRL540S	100 V	TO-263 (D2PAK)	64 nC	2200 pF	28 A	Surface Mount	77 mOhm	-55 °C	175 ░C	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4 V 5 V	3.7 W 150 W	2 V	10 V	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRL540STRLPBF	100 V	TO-263 (D2PAK)	64 nC	2200 pF	28 A	Surface Mount	77 mOhm	-55 °C	175 ░C	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4 V 5 V	3.7 W 150 W	2 V	10 V	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRL540L	100 V	TO-262-3	64 nC	2200 pF	28 A	Through Hole	77 mOhm			N-Channel	I2PAK TO-262-3 Long Leads TO-262AA	4 V 5 V			10 V	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRL540PBF-BE3	100 V	TO-220AB	64 nC	2200 pF	28 A	Through Hole	77 mOhm	-55 °C	175 ░C	N-Channel	TO-220-3		150 W	2 V	10 V	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRL540STRR	100 V	TO-263 (D2PAK)	64 nC	2200 pF	28 A	Surface Mount	77 mOhm	-55 °C	175 ░C	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4 V 5 V	3.7 W 150 W	2 V	10 V	MOSFET (Metal Oxide)