1N8026 Series

Catalog

DIODE SIL CARBIDE 1.2KV 8A TO257

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Current - Reverse Leakage @ Vr	Technology	Package / Case	Reverse Recovery Time (trr)	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Speed	Capacitance @ Vr, F	Supplier Device Package	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Voltage - Forward (Vf) (Max) @ If [Max]
GeneSiC Semiconductor 1N8026-GA	1.2 kV	Through Hole	10 µA	SiC (Silicon Carbide) Schottky	TO-257-3	0 ns	-55 °C	250 °C	500 mA	237 pF	TO-257	8 A	2.5 A	1.6 V