TSM680 Series

Catalog

-60V, -12A, P AND P-CHANNEL DUAL MOSFETS

Part	Configuration	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Power - Max	Package / Case	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs	FET Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Power Dissipation (Max)	Power - Max [Max]
Taiwan Semiconductor Corporation TSM680P06DPQ56	2 P-Channel 2 P-Channel (Dual)	870 pF	2.5 V	16.4 nC	Surface Mount	68 mOhm	MOSFET (Metal Oxide)	60 V	12 A	3.5 W	8-PowerTDFN	8-PDFN (5x6)	150 °C	-55 °C
Taiwan Semiconductor Corporation TSM680P06CH X0G			2.2 V		Through Hole	68 mOhm	MOSFET (Metal Oxide)	60 V	18 A		TO-251-3 Stub Leads IPAK	TO-251	150 °C	-55 °C	16.4 nC	P-Channel	20 V	4.5 V 10 V	870 pF	IPAK	20 W
Taiwan Semiconductor Corporation TSM680P06DPQ56 RLG	2 P-Channel (Dual)	870 pF	2.5 V	16.4 nC	Surface Mount	68 mOhm	MOSFET (Metal Oxide)	60 V	12 A		8-PowerTDFN	8-PDFN (5x6)	150 °C	-55 °C								3.5 W
Taiwan Semiconductor Corporation TSM680P06CP ROG			2.2 V		Surface Mount	68 mOhm	MOSFET (Metal Oxide)	60 V	18 A		DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252 (DPAK)	150 °C	-55 °C	16.4 nC	P-Channel	20 V	4.5 V 10 V	870 pF		20 W
Taiwan Semiconductor Corporation TSM680P06CH			2.2 V		Through Hole	68 mOhm	MOSFET (Metal Oxide)	60 V	18 A		TO-251-3 Stub Leads IPAK	TO-251S (IPAK SL)	150 °C	-55 °C	16.4 nC	P-Channel	20 V	4.5 V 10 V	870 pF		20 W