Catalog
650V 9A TO-220FM, Low-noise Power MOSFET
Description
AI
R6509ENX is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
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650V 9A TO-220FM, Low-noise Power MOSFET
650V 9A TO-220FM, Low-noise Power MOSFET
| Part | Rds On (Max) @ Id, Vgs [Max] | Power Dissipation (Max) | Vgs (Max) | FET Type | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Operating Temperature | Technology | Package / Case | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 585 mOhm | 48 W | 20 V | N-Channel | Through Hole | 430 pF | 24 nC | 650 V | 10 V | 4 V | 150 °C | MOSFET (Metal Oxide) | TO-220-3 Full Pack | 9 A | TO-220FM |