GD25LT256 Series
Manufacturer: GigaDevice Semiconductor (HK) Limited
IC FLASH
| Part | Technology | Memory Format | Clock Frequency | Voltage - Supply [Min] | Voltage - Supply [Max] | Memory Organization | Operating Temperature [Max] | Operating Temperature [Min] | Memory Interface | Memory Type | Access Time | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Memory Size | Mounting Type | Supplier Device Package | Package / Case | Grade | Qualification | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GigaDevice Semiconductor (HK) Limited | FLASH - NOR | FLASH | |||||||||||||||||||
GigaDevice Semiconductor (HK) Limited | FLASH - NOR (SLC) | FLASH | 200 MHz | 1.65 V | 2 V | 32 M | 85 C | -40 ¯C | DTR QPI SPI - Quad I/O | Non-Volatile | 6 ns | 1.2 ms | 70 µs | 256 Gbit | Surface Mount | 8-WSON (6x8) | 8-WDFN Exposed Pad | ||||
GigaDevice Semiconductor (HK) Limited | FLASH - NOR (SLC) | FLASH | 166 MHz | 1.65 V | 2 V | 32 M | 125 °C | -40 °C | DTR QPI SPI - Quad I/O | Non-Volatile | 6 ns | 3 ms | 140 µs | 256 Gbit | Surface Mount | 24-TFBGA (6x8) | 24-TBGA | Automotive | AEC-Q100 | ||
GigaDevice Semiconductor (HK) Limited | FLASH - NOR (SLC) | FLASH | 166 MHz | 1.65 V | 2 V | 32 M | 125 °C | -40 °C | DTR QPI SPI - Quad I/O | Non-Volatile | 6 ns | 3 ms | 140 µs | 256 Gbit | Surface Mount | 16-SOP | 16-SOIC | Automotive | AEC-Q100 | 7.5 mm | 0.295 " |
GigaDevice Semiconductor (HK) Limited | FLASH - NOR | FLASH | |||||||||||||||||||
GigaDevice Semiconductor (HK) Limited | FLASH - NOR (SLC) | FLASH | 200 MHz | 1.65 V | 2 V | 32 M | 85 C | -40 ¯C | DTR QPI SPI - Quad I/O | Non-Volatile | 6 ns | 1.2 ms | 70 µs | 256 Gbit | Surface Mount | 16-SOP | 16-SOIC | 7.5 mm | 0.295 " | ||
GigaDevice Semiconductor (HK) Limited | FLASH - NOR (SLC) | FLASH | 200 MHz | 1.65 V | 2 V | 32 M | 105 °C | -40 °C | DTR QPI SPI - Quad I/O | Non-Volatile | 6 ns | 2 ms | 140 µs | 256 Gbit | Surface Mount | 8-WSON (6x8) | 8-WDFN Exposed Pad | ||||
GigaDevice Semiconductor (HK) Limited | FLASH - NOR | FLASH | 200 MHz | 1.65 V | 2 V | 32 M | 85 C | -40 ¯C | DTR QPI SPI - Quad I/O | Non-Volatile | 256 Gbit | Surface Mount | 24-TFBGA (6x8) | 24-TBGA | |||||||
GigaDevice Semiconductor (HK) Limited | FLASH - NOR (SLC) | FLASH | 200 MHz | 1.65 V | 2 V | 32 M | 105 °C | -40 °C | DTR QPI SPI - Quad I/O | Non-Volatile | 6 ns | 2 ms | 140 µs | 256 Gbit | Surface Mount | 24-TFBGA (6x8) | 24-TBGA | ||||
GigaDevice Semiconductor (HK) Limited | FLASH - NOR (SLC) | FLASH | 166 MHz | 1.65 V | 2 V | 32 M | 125 °C | -40 °C | DTR QPI SPI - Quad I/O | Non-Volatile | 6 ns | 3 ms | 140 µs | 256 Gbit | Surface Mount | 8-WSON (6x8) | 8-WDFN Exposed Pad |