CSD16408Q5 Series

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 6.8 mOhm

Catalog

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 6.8 mOhm

Part	Power Dissipation (Max)	Package / Case	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package	Technology
Texas Instruments CSD16408Q5	3.1 W	8-PowerTDFN	4.5 mOhm	8.9 nC	4.5 V 10 V	N-Channel	-55 °C	150 °C	22 A 113 A	-12 V 16 V	1300 pF	2.1 V	25 V	Surface Mount	8-VSONP (5x6)	MOSFET (Metal Oxide)

Catalog

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 6.8 mOhm

Key Features

• Ultralow Q g and Q gdLow Thermal ResistanceAvalanche RatedSON 5-mm × 6-mm Plastic PackageUltralow Q g and Q gdLow Thermal ResistanceAvalanche RatedSON 5-mm × 6-mm Plastic Package

Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.