TK22E10 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
12V - 300V MOSFETS, N-CH MOSFET, 100 V, 0.0138 Ω@10V, TO-220, U-MOSⅧ-H
| Part | Supplier Device Package | Drain to Source Voltage (Vdss) | FET Type | Package / Case | Input Capacitance (Ciss) (Max) @ Vds [Max] | Operating Temperature | Vgs(th) (Max) @ Id | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Technology | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | TO-220 | 100 V | N-Channel | TO-220-3 | 1800 pF | 150 °C | 4 V | Through Hole | 10 V | MOSFET (Metal Oxide) | 13.8 mOhm | 72 W | 20 V | 28 nC | 52 A |