FDC636 Series

Catalog

MOSFET P-CH 20V 2.8A SUPERSOT6

Part	Technology	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type
ON Semiconductor FDC636P	MOSFET (Metal Oxide)	20 V	SuperSOT™-6	8 V	2.8 A	1 V	8.5 nC	Surface Mount	SOT-23-6 Thin TSOT-23-6	390 pF	130 mOhm	2.5 V 4.5 V	-55 °C	150 °C	P-Channel