NTMFD4901NF Series

Dual N-Channel Power MOSFET with Integrated Schottky 30V,

Catalog

Dual N-Channel Power MOSFET with Integrated Schottky 30V,

Part	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Configuration	FET Feature	Mounting Type	Power - Max	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C [Min]	Current - Continuous Drain (Id) @ 25°C [Max]	Vgs(th) (Max) @ Id [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor NTMFD4901NFT3G	1150 pF	8-PowerTDFN	2 N-Channel (Dual) Schottky	Logic Level Gate	Surface Mount	1.1 W 1.2 W	-55 °C	150 °C	30 V	6.5 mOhm	8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)	10.3 A	17.9 A	2.2 V	MOSFET (Metal Oxide)	9.7 nC

Dual N-Channel Power MOSFET with Integrated Schottky 30V,

• Co−Packaged Power Stage Solution to Minimize Board Space

• Low Side MOSFET with Integrated Schottky

• Minimized Parasitic Inductances

• Optimized Devices to Reduce Power Losses

• RoHS Compliant

Dual N-Channel Power MOSFET with Integrated Schottky 30 V, High Side 18 A / Low Side 30 A, Dual N−Channel SO8FL