FST120 Series
Manufacturer: GeneSiC Semiconductor
DIODE MOD SCHOTT 100V TO249AB
| Part | Current - Reverse Leakage @ Vr | Supplier Device Package | Current - Average Rectified (Io) (per Diode) | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Voltage - Forward (Vf) (Max) @ If | Mounting Type | Diode Configuration | Package / Case | Technology | Speed | Voltage - DC Reverse (Vr) (Max) [Max] | Voltage - Forward (Vf) (Max) @ If [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 2 mA | TO-249AB | 120 A (DC) | -55 °C | 150 °C | 840 mV | Chassis Mount | 1 Pair Common Cathode | TO-249AB | Schottky | 200 mA 500 ns | 100 V | |
GeneSiC Semiconductor | 2 mA | TO-249AB | 120 A (DC) | -55 °C | 150 °C | Chassis Mount | 1 Pair Common Cathode | TO-249AB | Schottky | 200 mA 500 ns | 30 V | 650 mV | |
GeneSiC Semiconductor | 2 mA | TO-249AB | 120 A (DC) | -55 °C | 150 °C | Chassis Mount | 1 Pair Common Cathode | TO-249AB | Schottky | 200 mA 500 ns | 60 V | 750 mV | |
GeneSiC Semiconductor | 2 mA | TO-249AB | 120 A (DC) | -55 °C | 150 °C | Chassis Mount | 1 Pair Common Cathode | TO-249AB | Schottky | 200 mA 500 ns | 35 V | 650 mV | |
GeneSiC Semiconductor | 1 mA | TO-249AB | 60 A | -55 °C | 150 °C | Chassis Mount | 1 Pair Common Cathode | TO-249AB | Schottky | 200 mA 500 ns | 880 mV | ||
GeneSiC Semiconductor | 2 mA | TO-249AB | 120 A (DC) | -55 °C | 150 °C | 840 mV | Chassis Mount | 1 Pair Common Cathode | TO-249AB | Schottky | 200 mA 500 ns | 80 V | |
GeneSiC Semiconductor | 2 mA | TO-249AB | 120 A (DC) | -55 °C | 150 °C | Chassis Mount | 1 Pair Common Cathode | TO-249AB | Schottky | 200 mA 500 ns | 40 V | 650 mV | |
GeneSiC Semiconductor | 1 mA | TO-249AB | 60 A | -55 °C | 150 °C | Chassis Mount | 1 Pair Common Cathode | TO-249AB | Schottky | 200 mA 500 ns | 200 V | 920 mV | |
GeneSiC Semiconductor | 2 mA | TO-249AB | 120 A (DC) | -55 °C | 150 °C | Chassis Mount | 1 Pair Common Cathode | TO-249AB | Schottky | 200 mA 500 ns | 20 V | 650 mV |