BD13510 Series

1.5 A, 45V NPN Power Bipolar Junction Transistor

Catalog

1.5 A, 45V NPN Power Bipolar Junction Transistor

Part	Transistor Type	Mounting Type	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature	Power - Max [Max]
ON Semiconductor BD13510STU	NPN	Through Hole	500 mV	63 hFE	TO-126-3	1.5 A	100 nA	TO-126-3 TO-225AA	45 V	150 °C	1.25 W

Catalog

1.5 A, 45V NPN Power Bipolar Junction Transistor

Key Features

• Minimum Gain - hFE= 63 @ IC= 150 mA

• BD135, BD137, BD139 are complementary with BD136, BD138, BD140

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Description

This series of plastic, NPN Power Bipolar Junction Transistor transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.