IS43TR16640 Series
Manufacturer: ISSI, Integrated Silicon Solution Inc
IC DRAM 1GBIT PAR 96TWBGA
| Part | Voltage - Supply [Min] | Voltage - Supply [Max] | Memory Size | Memory Interface | Write Cycle Time - Word, Page | Access Time | Memory Organization | Supplier Device Package | Mounting Type | Memory Type | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Memory Format | Clock Frequency | Technology | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ISSI, Integrated Silicon Solution Inc | 1.425 V | 1.575 V | 1 Mbit | Parallel | 15 ns | 20 ns | 64M x 16 | 96-TWBGA (9x13) | Surface Mount | Volatile | 95 °C | 0 °C | 96-TFBGA | DRAM | 667 MHz | SDRAM - DDR3 | ||
ISSI, Integrated Silicon Solution Inc | 1.283 V | 1.45 V | 1 Mbit | Parallel | 15 ns | 20 ns | 64M x 16 | 96-TWBGA (9x13) | Surface Mount | Volatile | 95 °C | 0 °C | 96-TFBGA | DRAM | 800 MHz | SDRAM - DDR3L | ||
ISSI, Integrated Silicon Solution Inc | 1.425 V | 1.575 V | 1 Mbit | Parallel | 15 ns | 20 ns | 64M x 16 | 96-TWBGA (9x13) | Surface Mount | Volatile | 95 °C | -40 °C | 96-TFBGA | DRAM | 667 MHz | SDRAM - DDR3 | ||
ISSI, Integrated Silicon Solution Inc | 1.425 V | 1.575 V | 1 Mbit | Parallel | 15 ns | 20 ns | 64M x 16 | 96-TWBGA (9x13) | Surface Mount | Volatile | 95 °C | 0 °C | 96-TFBGA | DRAM | 800 MHz | SDRAM - DDR3 | ||
ISSI, Integrated Silicon Solution Inc | 1.283 V | 1.45 V | 1 Mbit | Parallel | 15 ns | 20 ns | 64M x 16 | 96-TWBGA (9x13) | Surface Mount | Volatile | 95 °C | 0 °C | 96-TFBGA | DRAM | 800 MHz | SDRAM - DDR3L | Automotive | AEC-Q100 |
ISSI, Integrated Silicon Solution Inc | 1.425 V | 1.575 V | 1 Mbit | Parallel | 15 ns | 20 ns | 64M x 16 | 96-TWBGA (9x13) | Surface Mount | Volatile | 95 °C | 0 °C | 96-TFBGA | DRAM | 800 MHz | SDRAM - DDR3 | ||
ISSI, Integrated Silicon Solution Inc | 1.425 V | 1.575 V | 1 Mbit | Parallel | 15 ns | 20 ns | 64M x 16 | 96-TWBGA (9x13) | Surface Mount | Volatile | 95 °C | -40 °C | 96-TFBGA | DRAM | 800 MHz | SDRAM - DDR3 | Automotive | AEC-Q100 |
ISSI, Integrated Silicon Solution Inc | 1.283 V | 1.45 V | 1 Mbit | Parallel | 15 ns | 20 ns | 64M x 16 | 96-TWBGA (9x13) | Surface Mount | Volatile | 95 °C | -40 °C | 96-TFBGA | DRAM | 800 MHz | SDRAM - DDR3L | ||
ISSI, Integrated Silicon Solution Inc | 1.425 V | 1.575 V | 1 Mbit | Parallel | 15 ns | 20 ns | 64M x 16 | 96-TWBGA (9x13) | Surface Mount | Volatile | 95 °C | 0 °C | 96-TFBGA | DRAM | 933 MHz | SDRAM - DDR3 | ||
ISSI, Integrated Silicon Solution Inc | 1.283 V | 1.45 V | 1 Mbit | Parallel | 15 ns | 20 ns | 64M x 16 | 96-TWBGA (9x13) | Surface Mount | Volatile | 95 °C | -40 °C | 96-TFBGA | DRAM | 800 MHz | SDRAM - DDR3L |