
DRV3256-Q1 Series
Integrated 3-phase 48-V automotive Gate Driver Unit (GDU) with 2.5-A peak sink gate drive current
Manufacturer: Texas Instruments
Catalog
Integrated 3-phase 48-V automotive Gate Driver Unit (GDU) with 2.5-A peak sink gate drive current
Key Features
• AEC-Q100 qualified for automotive applications:Device ambient temperature grade 0: –40°C to +150°CDevice HBM ESD classification level 2Device CDM ESD classification level C4BFunctional Safety-ComplianttargetedDeveloped for functional safety applicationsDocumentation to aid ISO 26262 system design will be available upon production releaseSystematic capability up to ASIL D targetedThree N-Channel half-bridge gate driver2-A/2.5-A max peak gate drive currentPower architecture optimized for 48-V applications12-V/48-V split supply architecture95-V transient absolute maximum rating of DC link power supply (DHCP)105-V Bootstrap voltage to support 90-V MOSFET operating voltage rangeBootstrap with charge pump for 100% duty cycleIntegrated 1x (DRV3256A-Q1) or 3x (DRV3256-Q1) current shunt amplifiersIntegrated configurable Active Short Circuit (ASC) functionLow-side (DRV3256A-Q1) or Low-side and High-side (DRV3256-Q1/DRV3256B-Q1) ASC supportLow-side and High-side ASC supportDevice pin control availableFault handling capabilitySerial peripheral interface (SPI) with CRCSupports 3.3-V and 5-V logic inputsAdvanced protection featuresBattery voltage monitorsMOSFET VDSovercurrent monitorsRshuntovercurrent monitorsMOSFET VGSgate fault monitorsAnalog built in self testInternal regulator and clock monitorsDevice thermal warning and shutdownFault condition indicator pin sAEC-Q100 qualified for automotive applications:Device ambient temperature grade 0: –40°C to +150°CDevice HBM ESD classification level 2Device CDM ESD classification level C4BFunctional Safety-ComplianttargetedDeveloped for functional safety applicationsDocumentation to aid ISO 26262 system design will be available upon production releaseSystematic capability up to ASIL D targetedThree N-Channel half-bridge gate driver2-A/2.5-A max peak gate drive currentPower architecture optimized for 48-V applications12-V/48-V split supply architecture95-V transient absolute maximum rating of DC link power supply (DHCP)105-V Bootstrap voltage to support 90-V MOSFET operating voltage rangeBootstrap with charge pump for 100% duty cycleIntegrated 1x (DRV3256A-Q1) or 3x (DRV3256-Q1) current shunt amplifiersIntegrated configurable Active Short Circuit (ASC) functionLow-side (DRV3256A-Q1) or Low-side and High-side (DRV3256-Q1/DRV3256B-Q1) ASC supportLow-side and High-side ASC supportDevice pin control availableFault handling capabilitySerial peripheral interface (SPI) with CRCSupports 3.3-V and 5-V logic inputsAdvanced protection featuresBattery voltage monitorsMOSFET VDSovercurrent monitorsRshuntovercurrent monitorsMOSFET VGSgate fault monitorsAnalog built in self testInternal regulator and clock monitorsDevice thermal warning and shutdownFault condition indicator pin s
Description
AI
The DRV3256-Q1 family of devices are highly-integrated three phase gate driver s for 48-V automotive motor drive applications. These devices are specifically designed to support high-power motor drive applications by providing 2-A peak source and 2.5-A peak sink gate drive currents, and 90-V MOSFET transient over voltage support. A highly efficient bootstrap architecture is used to minimize power losses and self-heating of the gate drivers. A charge pump allows for the gate drivers to support 100% PWM duty cycle control.
A wide range of diagnostics, monitoring, and protection features supports a robust motor drive system design. A highly configurable Active Short Circuit (ASC) function which enables selected external MOSFETs is integrated to achieve the fast response to system faults and to eliminate the needs of external components.
Three or single low-side current shunt amplifiers are optionally provided to support resistor based low-side current sensing.
The DRV3256-Q1 family of devices are highly-integrated three phase gate driver s for 48-V automotive motor drive applications. These devices are specifically designed to support high-power motor drive applications by providing 2-A peak source and 2.5-A peak sink gate drive currents, and 90-V MOSFET transient over voltage support. A highly efficient bootstrap architecture is used to minimize power losses and self-heating of the gate drivers. A charge pump allows for the gate drivers to support 100% PWM duty cycle control.
A wide range of diagnostics, monitoring, and protection features supports a robust motor drive system design. A highly configurable Active Short Circuit (ASC) function which enables selected external MOSFETs is integrated to achieve the fast response to system faults and to eliminate the needs of external components.
Three or single low-side current shunt amplifiers are optionally provided to support resistor based low-side current sensing.