SI4800 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET N-CH 30V 6.5A 8SO
| Part | Power Dissipation (Max) | FET Type | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Package / Case | Package / Case [y] | Package / Case [x] | Mounting Type | Technology | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 1.3 W | N-Channel | 18.5 mOhm | 13 nC | 8-SOIC | 6.5 A | 30 V | 25 V | -55 °C | 150 °C | 1.8 V | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | MOSFET (Metal Oxide) | 4.5 V 10 V |