TLP785 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
PHOTOCOUPLER TRANS OUT
| Part | Current - Output / Channel [custom] | Current Transfer Ratio (Min) [Min] | Operating Temperature [Min] | Operating Temperature [Max] | Vce Saturation (Max) [Max] | Current Transfer Ratio (Max) [Max] | Turn On / Turn Off Time (Typ) | Voltage - Forward (Vf) (Typ) | Input Type | Output Type | Rise / Fall Time (Typ) | Current - DC Forward (If) (Max) [Max] | Number of Channels [custom] | Package / Case | Mounting Type | Supplier Device Package | Current Transfer Ratio (Min) | Current Transfer Ratio (Max) | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 50 mA | 100 % | -55 C | 110 °C | 400 mV | 600 % | 3 µs | 1.15 V | DC | Transistor | 2 µs 3 µs | 60 mA | 1 | 4-SMD Gull Wing | Surface Mount | 4-SMD | ||||
 Toshiba Semiconductor and Storage | 50 mA | 100 % | -55 C | 110 °C | 400 mV | 300 % | 3 µs | 1.15 V | DC | Transistor | 2 µs 3 µs | 60 mA | 1 | 4-SMD Gull Wing | Surface Mount | 4-SMD | ||||
Toshiba Semiconductor and Storage | 50 mA | -55 C | 110 °C | 400 mV | 3 µs | 1.15 V | DC | Transistor | 2 µs 3 µs | 60 mA | 1 | 4-SMD Gull Wing | Surface Mount | 4-SMD | 200 % | 400 % | ||||
Toshiba Semiconductor and Storage | 50 mA | 100 % | -55 C | 110 °C | 400 mV | 600 % | 3 µs | 1.15 V | DC | Transistor | 2 µs 3 µs | 60 mA | 1 | 4-DIP | Through Hole | 4-DIP | 0.3 in | 7.62 mm | ||
 Toshiba Semiconductor and Storage | 50 mA | 100 % | -55 C | 110 °C | 400 mV | 300 % | 3 µs | 1.15 V | DC | Transistor | 2 µs 3 µs | 60 mA | 1 | 4-DIP (0.400" 10.16mm) | Through Hole | 4-DIP | ||||
 Toshiba Semiconductor and Storage | 50 mA | -55 C | 110 °C | 400 mV | 600 % | 3 µs | 1.15 V | DC | Transistor | 2 µs 3 µs | 60 mA | 1 | 4-DIP | Through Hole | 4-DIP | 50 % | 0.3 in | 7.62 mm | ||
Toshiba Semiconductor and Storage | 50 mA | -55 C | 110 °C | 400 mV | 600 % | 3 µs | 1.15 V | DC | Transistor | 2 µs 3 µs | 60 mA | 1 | 200 % | |||||||
 Toshiba Semiconductor and Storage | 50 mA | -55 C | 110 °C | 400 mV | 600 % | 3 µs | 1.15 V | DC | Transistor | 2 µs 3 µs | 60 mA | 1 | 4-DIP (0.400" 10.16mm) | Through Hole | 4-DIP | 50 % | ||||
 Toshiba Semiconductor and Storage | 50 mA | -55 C | 110 °C | 400 mV | 3 µs | 1.15 V | DC | Transistor | 2 µs 3 µs | 60 mA | 1 | 4-DIP | Through Hole | 4-DIP | 50 % | 150 % | 0.3 in | 7.62 mm | ||
Toshiba Semiconductor and Storage | 50 mA | -55 C | 110 °C | 400 mV | 300 % | 3 µs | 1.15 V | DC | Transistor | 2 µs 3 µs | 60 mA | 1 | 4-DIP | Through Hole | 4-DIP | 150 % | 0.3 in | 7.62 mm |