MBR2X080 Series
Manufacturer: GeneSiC Semiconductor
DIODE MOD SCHOTT 120V 80A SOT227
| Part | Diode Configuration | Voltage - DC Reverse (Vr) (Max) [Max] | Speed | Current - Average Rectified (Io) (per Diode) | Supplier Device Package | Voltage - Forward (Vf) (Max) @ If [Max] | Mounting Type | Current - Reverse Leakage @ Vr | Package / Case | Technology | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 2 Independent | 120 V | 200 mA 500 ns | 80 A | SOT-227 | 880 mV | Chassis Mount | 3 mA | SOT-227-4 miniBLOC | Schottky | -40 °C | 150 °C | |
GeneSiC Semiconductor | 2 Independent | 200 mA 500 ns | 80 A | SOT-227 | 880 mV | Chassis Mount | 3 mA | SOT-227-4 miniBLOC | Schottky | -40 °C | 150 °C | ||
GeneSiC Semiconductor | 2 Independent | 45 V | 200 mA 500 ns | 80 A | SOT-227 | Chassis Mount | 1 mA | SOT-227-4 miniBLOC | Schottky | -40 °C | 150 °C | 700 mV | |
GeneSiC Semiconductor | 2 Independent | 180 V | 200 mA 500 ns | 80 A | SOT-227 | 920 mV | Chassis Mount | 3 mA | SOT-227-4 miniBLOC | Schottky | -40 °C | 150 °C | |
GeneSiC Semiconductor | 2 Independent | 100 V | 200 mA 500 ns | 80 A | SOT-227 | 840 mV | Chassis Mount | 1 mA | SOT-227-4 miniBLOC | Schottky | -40 °C | 150 °C | |
GeneSiC Semiconductor | 2 Independent | 80 V | 200 mA 500 ns | 80 A | SOT-227 | 840 mV | Chassis Mount | 1 mA | SOT-227-4 miniBLOC | Schottky | -40 °C | 150 °C | |
GeneSiC Semiconductor | 2 Independent | 60 V | 200 mA 500 ns | 80 A | SOT-227 | Chassis Mount | 1 mA | SOT-227-4 miniBLOC | Schottky | -40 °C | 150 °C | 750 mV | |
GeneSiC Semiconductor | 2 Independent | 200 V | 200 mA 500 ns | 80 A | SOT-227 | 920 mV | Chassis Mount | 3 mA | SOT-227-4 miniBLOC | Schottky | -40 °C | 150 °C |