Catalog
Power Diode Bare Die
Key Features
• Advanced Gen VII Technology
• Fast and Soft Recovery
• Low Forward Voltage
• Easy to Parallel Operation
Description
AI
1200 V, 60 A, Gen VII, Fast Recovery Diode
Beta
⌘K
Power Diode Bare Die
Power Diode Bare Die
| Part | Speed | Mounting Type | Current - Reverse Leakage @ Vr | Supplier Device Package | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Current - Average Rectified (Io) | Package / Case | Technology | Voltage - Forward (Vf) (Max) @ If | Voltage - DC Reverse (Vr) (Max) [Max] | Reverse Recovery Time (trr) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | 200 mA 500 ns | Surface Mount | 10 µA | Wafer | -40 °C | 175 ░C | 60 A | Die | Standard | 2.08 V | 1.2 kV | 246 ns |