BSM400D12P2G003 Series

1200V, 397A, Half bridge, Silicon-carbide (SiC) Power Module

Catalog

1200V, 397A, Half bridge, Silicon-carbide (SiC) Power Module

Part	Power - Max [Max]	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Technology	Supplier Device Package	Configuration	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id [Max]	Current - Continuous Drain (Id) @ 25°C
Rohm Semiconductor BSM400D12P2G003	2450 W	1.2 kV	1200 V	-40 °C	150 °C	Module	Silicon Carbide (SiC)	Module	2 N-Channel	38000 pF	4 V	400 A

Catalog

1200V, 397A, Half bridge, Silicon-carbide (SiC) Power Module

Description

BSM400D12P2G003 is a half-bridge module consisting of SiC-DMOSFET and SiC-SBD, suitable for motor drive, inverter, converter, photovoltaics, wind power generation, induction heating equipment.