FDW26 Series

Catalog

MOSFET P-CH 20V 4.5A 8TSSOP

Part	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Mounting Type	Power Dissipation (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Package / Case [custom]	Package / Case [custom]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Technology	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power - Max [Max]	Configuration	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Feature
ON Semiconductor FDW262P	18 nC	8 V	Surface Mount	1.3 W	P-Channel	1.8 V 4.5 V	8-TSSOP	0.173 "	4.4 mm	-55 °C	150 °C	4.5 A	47 mOhm	8-TSSOP	20 V	1.5 V	MOSFET (Metal Oxide)
ON Semiconductor FDW262P	18 nC	8 V	Surface Mount	1.3 W	P-Channel	1.8 V 4.5 V	8-TSSOP	0.173 "	4.4 mm	-55 °C	150 °C	4.5 A	47 mOhm	8-TSSOP	20 V	1.5 V	MOSFET (Metal Oxide)
ON Semiconductor FDW2601NZ			Surface Mount				8-TSSOP	0.173 "	4.4 mm	-55 °C	150 °C	8.2 A		8-TSSOP	30 V	1.5 V	MOSFET (Metal Oxide)	15 mOhm	1840 pF	1.6 W	2 N-Channel (Dual) Common Drain	30 nC	Logic Level Gate