SSM3J306 Series

Catalog

MOSFET P-CH 30V 2.4A TSM

Part	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Package / Case	Technology	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Power Dissipation (Max) [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drain to Source Voltage (Vdss)
Toshiba Semiconductor and Storage SSM3J306T(TE85L,F)	150 °C	2.5 nC	Surface Mount	SC-59 SOT-23-3 TO-236-3	MOSFET (Metal Oxide)	117 mOhm	280 pF	TSM	2.4 A	20 V	700 mW	P-Channel	4 V	10 V	30 V