MT53E256 Series
Manufacturer: Micron Technology Inc.
LPDRAM MEMORY AUTOMOTIVE AEC-Q100
| Part | Memory Interface | Write Cycle Time - Word, Page | Memory Size | Voltage - Supply [Min] | Voltage - Supply [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Grade | Access Time | Mounting Type | Clock Frequency | Qualification | Package / Case | Memory Organization | Supplier Device Package | Technology | Memory Type | Memory Format | Voltage - Supply |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Micron Technology Inc. | Parallel | 18 ns | 512 kB | 1.06 V | 1.17 V | 125 °C | -40 °C | Automotive | 3.5 ns | Surface Mount | 2.133 GHz | AEC-Q100 | 200-TFBGA | 256 M | 200-TFBGA (10x14.5) | SDRAM - Mobile LPDDR4X | Volatile | DRAM | |
Micron Technology Inc. | Parallel | 18 ns | 512 kB | 1.06 V | 1.17 V | 105 °C | -40 °C | Automotive | 3.5 ns | Surface Mount | 2.133 GHz | AEC-Q100 | 200-TFBGA | 256 M | 200-TFBGA (10x14.5) | SDRAM - Mobile LPDDR4X | Volatile | DRAM | |
Micron Technology Inc. | 1024 KB | 105 °C | -40 °C | Automotive | Surface Mount | 1866 MHz | AEC-Q100 | 200-WFBGA | 256 M | 200-WFBGA (10x14.5) | SDRAM - Mobile LPDDR4 | Volatile | DRAM | 1.1 V | |||||
Micron Technology Inc. | Parallel | 18 ns | 1024 KB | 1.06 V | 1.17 V | 105 °C | -40 °C | Automotive | 3.5 ns | Surface Mount | 2.133 GHz | AEC-Q100 | 200-TFBGA | 256 M | 200-TFBGA (10x14.5) | SDRAM - Mobile LPDDR4X | Volatile | DRAM | |
Micron Technology Inc. | 1024 KB | 125 °C | -40 °C | Automotive | Surface Mount | 1866 MHz | AEC-Q100 | 200-WFBGA | 256 M | 200-WFBGA (10x14.5) | SDRAM - Mobile LPDDR4 | Volatile | DRAM | 1.1 V | |||||
Micron Technology Inc. | Parallel | 18 ns | 512 kB | 1.06 V | 1.17 V | 85 °C | -30 °C | 3.5 ns | Surface Mount | 2.133 GHz | 200-TFBGA | 256 M | 200-TFBGA (10x14.5) | SDRAM - Mobile LPDDR4X | Volatile | DRAM | |||
Micron Technology Inc. | Parallel | 18 ns | 1024 KB | 1.06 V | 1.17 V | 85 °C | -30 °C | 3.5 ns | Surface Mount | 2.133 GHz | 200-TFBGA | 256 M | 200-TFBGA (10x14.5) | SDRAM - Mobile LPDDR4X | Volatile | DRAM | |||
Micron Technology Inc. | Parallel | 18 ns | 1024 KB | 1.06 V | 1.17 V | 95 °C | -40 °C | 3.5 ns | Surface Mount | 2.133 GHz | 200-TFBGA | 256 M | 200-TFBGA (10x14.5) | SDRAM - Mobile LPDDR4X | Volatile | DRAM | |||
Micron Technology Inc. | 1024 KB | 95 °C | -40 °C | Automotive | Surface Mount | 1866 MHz | AEC-Q100 | 200-WFBGA | 256 M | 200-WFBGA (10x14.5) | SDRAM - Mobile LPDDR4 | Volatile | DRAM | 1.1 V | |||||
Micron Technology Inc. | Parallel | 18 ns | 512 kB | 1.06 V | 1.17 V | 85 °C | -30 °C | 3.5 ns | Surface Mount | 2.133 GHz | 200-TFBGA | 256 M | 200-TFBGA (10x14.5) | SDRAM - Mobile LPDDR4X | Volatile | DRAM |