MBRT120 Series

Catalog

DIODE MOD SCHOTT 200V 60A 3TOWER

Part	Technology	Mounting Type	Speed	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Average Rectified (Io) (per Diode)	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Diode Configuration	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Supplier Device Package	Current - Reverse Leakage @ Vr
GeneSiC Semiconductor MBRT120200R	Schottky	Chassis Mount	200 mA 500 ns	920 mV	60 A	Three Tower	200 V	1 Pair Common Anode	-55 °C	150 °C	Three Tower	1 mA
GeneSiC Semiconductor MBRT120100	Schottky	Chassis Mount	200 mA 500 ns	880 mV	60 A	Three Tower	100 V	1 Pair Common Cathode	-55 °C	150 °C	Three Tower	1 mA
GeneSiC Semiconductor MBRT12045	Schottky	Chassis Mount	200 mA 500 ns	750 mV	60 A	Three Tower	45 V	1 Pair Common Cathode	-55 °C	150 °C	Three Tower	1 mA
GeneSiC Semiconductor MBRT120150R	Schottky	Chassis Mount	200 mA 500 ns	880 mV	60 A	Three Tower		1 Pair Common Anode	-55 °C	150 °C	Three Tower	1 mA
GeneSiC Semiconductor MBRT12020	Schottky	Chassis Mount	200 mA 500 ns	750 mV	60 A	Three Tower	20 V	1 Pair Common Cathode	-55 °C	150 °C	Three Tower	1 mA
GeneSiC Semiconductor MBRT12020R	Schottky	Chassis Mount	200 mA 500 ns	750 mV	60 A	Three Tower	20 V	1 Pair Common Anode	-55 °C	150 °C	Three Tower	1 mA
GeneSiC Semiconductor MBRT12060	Schottky	Chassis Mount	200 mA 500 ns	800 mV	60 A	Three Tower	60 V	1 Pair Common Cathode	-55 °C	150 °C	Three Tower	1 mA
GeneSiC Semiconductor MBRT12030	Schottky	Chassis Mount	200 mA 500 ns	750 mV	60 A	Three Tower	30 V	1 Pair Common Cathode	-55 °C	150 °C	Three Tower	1 mA
GeneSiC Semiconductor MBRT12035R	Schottky	Chassis Mount	200 mA 500 ns	750 mV	60 A	Three Tower	35 V	1 Pair Common Anode	-55 °C	150 °C	Three Tower	1 mA
GeneSiC Semiconductor MBRT120200	Schottky	Chassis Mount	200 mA 500 ns	920 mV	60 A	Three Tower	200 V	1 Pair Common Cathode	-55 °C	150 °C	Three Tower	1 mA