FFSD2065B Series

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D2, DPAK

Catalog

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D2, DPAK

Part	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Technology	Package / Case	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Mounting Type
ON Semiconductor FFSD2065B	23.4 A	1.7 V	SiC (Silicon Carbide) Schottky	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252 (DPAK)	175 ░C	-55 C	0 ns	866 pF	40 µA	650 V	No Recovery Time	Surface Mount

Catalog

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D2, DPAK

Key Features

• Max Junction Temperature 175°C

• Avalanche Rated 94 mJ

• High Surge Current Capacity

• Positive Temperature Coefficient

• No Reverse Recovery / No Forward Recovery

• Low Vf @ TJ:175 °C

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.