FQP10N20C Series

Power MOSFET, N-Channel, QFET®, 200 V, 9.5 A, 360 mΩ, TO-220

Catalog

Power MOSFET, N-Channel, QFET®, 200 V, 9.5 A, 360 mΩ, TO-220

Part	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Power Dissipation (Max) [Max]	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id
ON Semiconductor FQP10N20C	200 V	360 mOhm	TO-220-3	TO-220-3	510 pF	Through Hole	-55 °C	150 °C	9.5 A	N-Channel	72 W	30 V	26 nC	MOSFET (Metal Oxide)	10 V	4 V
ON Semiconductor FQP10N20C	200 V	360 mOhm	TO-220-3	TO-220-3	510 pF	Through Hole	-55 °C	150 °C	9.5 A	N-Channel	72 W	30 V	26 nC	MOSFET (Metal Oxide)	10 V	4 V

Catalog

Power MOSFET, N-Channel, QFET®, 200 V, 9.5 A, 360 mΩ, TO-220

Key Features

• 9.5A, 200V, RDS(on) = 0.36Ω@VGS= 10V

• Low gate charge ( typical 20 nC)

• Low Crss ( typical 40.5 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Description

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.