SI4511 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET N/P-CH 20V 7.2A 8-SOIC
| Part | Technology | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Power - Max [Max] | Package / Case | Package / Case [y] | Package / Case [x] | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Configuration | FET Feature | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 20 V | 1.8 V | 4.6 A 7.2 A | 1.1 W | 8-SOIC | 3.9 mm | 0.154 in | 8-SOIC | 18 nC | Surface Mount | N and P-Channel | Logic Level Gate | 14.5 mOhm |
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 20 V | 1.8 V | 4.6 A 7.2 A | 1.1 W | 8-SOIC | 3.9 mm | 0.154 in | 8-SOIC | 18 nC | Surface Mount | N and P-Channel | Logic Level Gate | 14.5 mOhm |