1N8031 Series
Manufacturer: GeneSiC Semiconductor
Beta
⌘K
DIODE SIL CARBIDE 650V 1A TO276
| Part | Package / Case | Voltage - DC Reverse (Vr) (Max) [Max] | Mounting Type | Current - Reverse Leakage @ Vr | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Technology | Current - Average Rectified (Io) | Supplier Device Package | Capacitance @ Vr, F | Speed | Reverse Recovery Time (trr) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 GeneSiC Semiconductor | TO-276AA | 650 V | Through Hole | 5 µA | -55 °C | 250 °C | SiC (Silicon Carbide) Schottky | 1 A | TO-276 | 76 pF | 500 mA | 0 ns |