PSMN011-60ML Series

N-channel 60 V 11.3 mΩ logic level MOSFET in LFPAK33

Manufacturer: Freescale Semiconductor - NXP

Catalog

N-channel 60 V 11.3 mΩ logic level MOSFET in LFPAK33

Part	Technology	Supplier Device Package	Package / Case	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Configuration	FET Feature	Power - Max [Max]
Freescale Semiconductor - NXP PSMN011-30YLC,115	MOSFET (Metal Oxide)	LFPAK56 Power-SO8	SC-100 SOT-669	N-Channel	30 V	641 pF	Surface Mount	11.6 mOhm	4.5 V 10 V	37 A	-55 °C	175 ░C	20 V	10.3 nC	29 W
Freescale Semiconductor - NXP PSMN011-60MSX	MOSFET (Metal Oxide)	LFPAK33		N-Channel	60 V		Surface Mount		10 V	61 A	-55 °C	175 ░C	20 V			11.3 mOhm	1368 pF	23 nC
Freescale Semiconductor - NXP PSMN011-80YS,115	MOSFET (Metal Oxide)	LFPAK56 Power-SO8	SC-100 SOT-669	N-Channel	80 V	2800 pF	Surface Mount	11 mOhm	10 V	67 A	-55 °C	175 ░C	20 V	45 nC	117 W
Freescale Semiconductor - NXP PSMN011-60MLX	MOSFET (Metal Oxide)	LFPAK33		N-Channel	60 V	2191 pF	Surface Mount		4.5 V 10 V	61 A	-55 °C	175 ░C	20 V	37.2 nC		11.3 mOhm			2.45 V
Freescale Semiconductor - NXP PSMN011-60HLX	MOSFET (Metal Oxide)	LFPAK56D	8-LFPAK56 SOT-1205		60 V	3470 pF	Surface Mount	10.7 mOhm		35 A	-55 °C	175 ░C						24.5 nC	2.1 V	2 N-Channel (Dual)	Logic Level Gate	68 W

Catalog

N-channel 60 V 11.3 mΩ logic level MOSFET in LFPAK33

Description

Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.