FDFM2P110 Series

Integrated P-Channel PowerTrench® MOSFET and Schottky Diode -20 V, -3.5 A, 140 mΩ

Catalog

Integrated P-Channel PowerTrench® MOSFET and Schottky Diode -20 V, -3.5 A, 140 mΩ

Part	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Supplier Device Package	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Technology	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	FET Feature	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FDFM2P110	140 mOhm	3.5 A	2 W	MicroFET 3x3mm	P-Channel	20 V	2.5 V 4.5 V	280 pF	Surface Mount	MOSFET (Metal Oxide)	1.5 V	-55 °C	150 °C	12 V	Schottky Diode (Isolated)	4 nC
ON Semiconductor FDFM2P110	140 mOhm	3.5 A	2 W	MicroFET 3x3mm	P-Channel	20 V	2.5 V 4.5 V	280 pF	Surface Mount	MOSFET (Metal Oxide)	1.5 V	-55 °C	150 °C	12 V	Schottky Diode (Isolated)	4 nC

Catalog

Integrated P-Channel PowerTrench® MOSFET and Schottky Diode -20 V, -3.5 A, 140 mΩ

Key Features

-3.5A, -20V

• RDS(ON)= 140 mΩ @ VGS= -4.5V

• RDS(ON)= 200 mΩ @ VGS= -2.5V

• Low Profile – 0.8mm maximum – in the new packageMicroFET 3x3 mm

Description

FDFM2P110 combines the exceptional performance of PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a MicroFET package.This device is designed specifically as a single package solution for Buck Boost. It features a fast switching, low gate charge MOSFET with very low on-state resistance.