NVMD4N03 Series

Dual N-Channel Power MOSFET 30V, 4A, 60mΩ

Catalog

Dual N-Channel Power MOSFET 30V, 4A, 60mΩ

Part	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Power - Max [Max]	Configuration	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Package / Case	Package / Case [y]	Package / Case [x]	Mounting Type	FET Feature	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Technology	Qualification
ON Semiconductor NVMD4N03R2G	60 mOhm	400 pF	-55 °C	150 °C	Automotive	2 W	2 N-Channel (Dual)	3 V	4 A	8-SOIC	3.9 mm	0.154 in	Surface Mount	Logic Level Gate	8-SOIC	16 nC	30 V	MOSFET (Metal Oxide)	AEC-Q101

Catalog

Dual N-Channel Power MOSFET 30V, 4A, 60mΩ

Key Features

• Designed for use in low voltage, high speed switching applications

• Ultra Low On-Resistance Provides Higher Efficiency and Extends Battery Life

• Miniature SO-8 Surface Mount Package - Saves Board Space

• Diode is Characterized for Use in Bridge Circuits

• Diode Exhibits High Speed, with Soft Recovery

• AEC−Q101 Qualified and PPAP Capable

• RoHS Compliant

Description

Automotive Power MOSFET. 30V, 4A, 60 mΩ, Dual N-Channel, S0-8, Logic Level. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.