R1LV1616H Series
Manufacturer: Renesas Electronics Corporation
IC SRAM 16MBIT PARALLEL 48TFBGA
| Part | Voltage - Supply [Min] | Voltage - Supply [Max] | Package / Case | Supplier Device Package | Memory Format | Access Time | Memory Organization | Memory Interface | Mounting Type | Memory Size | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Technology | Memory Type | Operating Temperature [Max] | Operating Temperature [Min] | Memory Organization [custom] | Memory Organization [custom] | Package / Case [y] | Package / Case [y] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics Corporation | 2.7 V | 3.6 V | 48-TFBGA | 48-TFBGA (8x9.5) | SRAM | 45 ns | 1 M | Parallel | Surface Mount | 16 Mb | 45 ns | 45 ns | SRAM - Asynchronous | Volatile | 85 °C | -40 °C | ||||
Renesas Electronics Corporation | 2.7 V | 3.6 V | 48-TFBGA | 48-TFBGA (8x9.5) | SRAM | 45 ns | 1 M | Parallel | Surface Mount | 16 Mb | 45 ns | 45 ns | SRAM - Asynchronous | Volatile | 85 °C | -40 °C | ||||
Renesas Electronics Corporation | 2.7 V | 3.6 V | 48-TFSOP | 48-TSOP I | SRAM | 55 ns | Parallel | Surface Mount | 16 Mb | 55 ns | 55 ns | SRAM - Asynchronous | Volatile | 85 °C | -40 °C | 16 8 | 1M 2M | 18.4 mm | 0.724 in | |
Renesas Electronics Corporation | 2.7 V | 3.6 V | 48-TFSOP | 48-TSOP I | SRAM | 45 ns | Parallel | Surface Mount | 16 Mb | 45 ns | 45 ns | SRAM - Asynchronous | Volatile | 85 °C | -40 °C | 16 8 | 1M 2M | 18.4 mm | 0.724 in | |
Renesas Electronics Corporation | 2.7 V | 3.6 V | 48-TFSOP | 48-TSOP I | SRAM | 45 ns | Parallel | Surface Mount | 16 Mb | 45 ns | 45 ns | SRAM - Asynchronous | Volatile | 85 °C | -40 °C | 16 8 | 1M 2M | 18.4 mm | 0.724 in | |
Renesas Electronics Corporation | 2.7 V | 3.6 V | 48-TFBGA | 48-TFBGA (8x9.5) | SRAM | 55 ns | 1 M | Parallel | Surface Mount | 16 Mb | 55 ns | 55 ns | SRAM - Asynchronous | Volatile | 85 °C | -40 °C |