MURTA300 Series
Manufacturer: GeneSiC Semiconductor
DIODE MODULE GP 600V 150A 3TOWER
| Part | Diode Configuration | Supplier Device Package | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Voltage - DC Reverse (Vr) (Max) [Max] | Package / Case | Voltage - Forward (Vf) (Max) @ If [Max] | Voltage - Forward (Vf) (Max) @ If | Technology | Mounting Type | Current - Average Rectified (Io) (per Diode) | Speed [Min] | Current - Reverse Leakage @ Vr |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 1 Pair Common Cathode | Three Tower | -55 °C | 150 °C | 600 V | Three Tower | 2.6 V | 150 A | Standard | Chassis Mount | 150 A | 200 mA 500 ns | 25 µA |
GeneSiC Semiconductor | 1 Pair Common Anode | Three Tower | -55 °C | 150 °C | 200 V | Three Tower | 1 V 150 A | Standard | Chassis Mount | 150 A | 200 mA 500 ns | 25 µA | |
GeneSiC Semiconductor | 1 Pair Common Cathode | Three Tower | -55 °C | 150 °C | 600 V | Three Tower | 1.7 V | Standard | Chassis Mount | 150 A | 200 mA 500 ns | 25 µA | |
GeneSiC Semiconductor | 1 Pair Common Anode | Three Tower | -55 °C | 150 °C | 400 V | Three Tower | 1.3 V | Standard | Chassis Mount | 150 A | 200 mA 500 ns | 25 µA | |
GeneSiC Semiconductor | 1 Pair Common Cathode | Three Tower | -55 °C | 150 °C | 400 V | Three Tower | 1.3 V | Standard | Chassis Mount | 150 A | 200 mA 500 ns | 25 µA | |
GeneSiC Semiconductor | 1 Pair Common Cathode | Three Tower | -55 °C | 150 °C | 200 V | Three Tower | 1 V 150 A | Standard | Chassis Mount | 150 A | 200 mA 500 ns | 25 µA | |
GeneSiC Semiconductor | 1 Pair Common Anode | Three Tower | -55 °C | 150 °C | 600 V | Three Tower | 1.7 V | Standard | Chassis Mount | 150 A | 200 mA 500 ns | 25 µA |