FDV305N Series

N-Channel PowerTrench® MOSFET 20V, 0.9A, 220mΩ

Catalog

N-Channel PowerTrench® MOSFET 20V, 0.9A, 220mΩ

Part	Vgs (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Package / Case	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]
ON Semiconductor FDV305N	12 V	Surface Mount	220 mOhm	4.5 V	1.5 nC	-55 °C	150 °C 155 °C	MOSFET (Metal Oxide)	1.5 V	2.5 V 4.5 V	SOT-23-3	900 mA	20 V	SC-59 SOT-23-3 TO-236-3	N-Channel	109 pF	350 mW

N-Channel PowerTrench® MOSFET 20V, 0.9A, 220mΩ

• 0.9 A, 20 V

• RDS(ON)= 220 mΩ @ VGS= 4.5 V

• RDS(ON)= 300 mΩ @ VGS= 2.5 V

• Low gate charge

• Fast switching speed

• High performance trench technology for extremelylow RDS(ON)

This 20V N-Channel MOSFET uses a high voltage PowerTrench process. It has been optimized for power management applications.