IRF730 Series

Manufacturer: Vishay General Semiconductor - Diodes Division

Catalog

MOSFET N-CH 400V 5.5A TO220AB

Part	Technology	Vgs (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	FET Type	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]
Vishay General Semiconductor - Diodes Division IRF730APBF	MOSFET (Metal Oxide)	30 V	1 Ohm	600 pF	5.5 A	74 W	4.5 V	400 V	N-Channel	Through Hole	-55 °C	150 °C	TO-220AB	10 V	22 nC	TO-220-3
Vishay General Semiconductor - Diodes Division IRF730STRL	MOSFET (Metal Oxide)	20 V	1 Ohm	700 pF	5.5 A		4 V	400 V	N-Channel	Surface Mount	-55 °C	150 °C	TO-263 (D2PAK)	10 V	38 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3.1 W 74 W
Vishay General Semiconductor - Diodes Division IRF730ASPBF	MOSFET (Metal Oxide)	30 V	1 Ohm	600 pF	5.5 A	74 W	4.5 V	400 V	N-Channel	Surface Mount	-55 °C	150 °C	TO-263 (D2PAK)	10 V	22 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
Vishay General Semiconductor - Diodes Division IRF730ASTRLPBF	MOSFET (Metal Oxide)	30 V	1 Ohm	600 pF	5.5 A	74 W	4.5 V	400 V	N-Channel	Surface Mount	-55 °C	150 °C	TO-263 (D2PAK)	10 V	22 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
Vishay General Semiconductor - Diodes Division IRF730BPBF	MOSFET (Metal Oxide)	30 V		311 pF	6 A		5 V	400 V	N-Channel	Through Hole	-55 °C	150 °C	TO-220AB	10 V	18 nC	TO-220-3	104 W	1 Ohm
Vishay General Semiconductor - Diodes Division IRF730STRLPBF	MOSFET (Metal Oxide)	20 V	1 Ohm	700 pF	5.5 A		4 V	400 V	N-Channel	Surface Mount	-55 °C	150 °C	TO-263 (D2PAK)	10 V	38 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3.1 W 74 W
Vishay General Semiconductor - Diodes Division IRF730S	MOSFET (Metal Oxide)	20 V	1 Ohm	700 pF	5.5 A		4 V	400 V	N-Channel	Surface Mount	-55 °C	150 °C	TO-263 (D2PAK)	10 V	38 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3.1 W 74 W
Vishay General Semiconductor - Diodes Division IRF730ASTRL	MOSFET (Metal Oxide)	30 V	1 Ohm	600 pF	5.5 A	74 W	4.5 V	400 V	N-Channel	Surface Mount	-55 °C	150 °C	TO-263 (D2PAK)	10 V	22 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
Vishay General Semiconductor - Diodes Division IRF730APBF-BE3	MOSFET (Metal Oxide)	30 V	1 Ohm	600 pF	5.5 A	74 W	4.5 V	400 V	N-Channel	Through Hole	-55 °C	150 °C	TO-220AB		22 nC	TO-220-3
Vishay General Semiconductor - Diodes Division IRF730AS	MOSFET (Metal Oxide)	30 V	1 Ohm	600 pF	5.5 A	74 W	4.5 V	400 V	N-Channel	Surface Mount	-55 °C	150 °C	TO-263 (D2PAK)	10 V	22 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB