TK65S04N1L Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
12V - 300V MOSFETS, N-CH MOSFET, 40 V, 65 A, 0.0043 Ω@10V, DPAK+
| Part | Power Dissipation (Max) | Grade | Rds On (Max) @ Id, Vgs | Qualification | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Operating Temperature | Vgs (Max) | FET Type | Supplier Device Package | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Technology | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 107 W | Automotive | 4.3 mOhm | AEC-Q101 | Surface Mount | 2550 pF | 4.5 V 10 V | 39 nC | 2.5 V | 175 °C | 20 V | N-Channel | DPAK+ | 40 V | 65 A | MOSFET (Metal Oxide) | DPAK (2 Leads + Tab) SC-63 TO-252-3 |
 Toshiba Semiconductor and Storage | 107 W | 4.3 mOhm | Surface Mount | 2550 pF | 10 V | 39 nC | 2.5 V | 175 °C | 20 V | N-Channel | DPAK+ | 40 V | 65 A | MOSFET (Metal Oxide) | DPAK (2 Leads + Tab) SC-63 TO-252-3 |