FQB5N50C Series

Power MOSFET, N-Channel, QFET®, 500 V, 5 A, 1.4 Ω, D2PAK

Catalog

Power MOSFET, N-Channel, QFET®, 500 V, 5 A, 1.4 Ω, D2PAK

Part	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)
ON Semiconductor FQB5N50CTM	N-Channel	10 V	TO-263 (D2PAK)	5 A	625 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4 V	73 W	-55 °C	150 °C	MOSFET (Metal Oxide)	30 V	24 nC	Surface Mount	1.4 Ohm	500 V

Catalog

Power MOSFET, N-Channel, QFET®, 500 V, 5 A, 1.4 Ω, D2PAK

Key Features

• 5A, 500V, RDS(on)= 1.4Ω(Max.) @VGS= 10 V, ID= 2.5A

• Low gate charge ( Typ. 18nC)

• Low Crss( Typ. 15pF)

• 100% avalanche tested

• RoHS compliant

Description

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.